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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE200206 Issued Date : 2002.02.01 Revised Date : 2006.07.04 Page No. : 1/6 HMJE13009A 12 AMPERE NPN SILICON POWER TRANSISTOR Description The HMJE13009A is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch-controls, Solenoid/Relay drivers and Deflectioncircuits. TO-220AB Specification Features * VCEO(sus)=400V * Reverse Bias SOA with Inductive Loads @TC=100C * Inductive Switching Matrix 3 to 12 Amp., 25 and 100C...tc@8A, 100C is 120ns(Typ.) * 700V Blocking Capability * SOA and Switching Applications Information Absolute Maximum Ratings Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak* Base Current-Continuous Base Current-Peak* Emitter Current-Continuous Emitter Current-Peak Total Power Dissipation@TA=25C Derate above 25C Total Power Dissipation@TC=25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO(sus) VCBO VEBO IC ICM IB IBM IE IEM PD PD TJ, Tstg Max. 400 700 9 12 24 6 12 18 36 2 16 100 800 -65 to +150 Unit Vdc Vdc Vd Adc Adc Adc Adc Adc Adc Watts mW/C Watts mW/C C *Pulse Test: Pulse Width 380us, Duty Cycle2% Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes: 1/8" from Case for 5 Seconds Symbol RJC RJA TL Max. 1.25 62.5 275 Unit C/W C/W C HMJE13009A HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Electrical Characteristics (TA=25C unless otherwise noted) Characteristic * Off Characteristics Collector-Emitter Sustaining Voltage (IC=10mA, IB=0) Collector Cutoff Current (VCEV=Rated Value, VBE(off)=1.5Vdc (VCEV=Rated Value, VBE(off)=1.5Vdc, TC=100C) Emitter Cutoff Current (VEB=9Vdc, IC=0) * Second Breakdown Second Breakdown Collector Current with base forward biased Clamped Inductive SOA with Base Reverse Biased * On Characteristics DC Current Gain (IC=0.5Adc, VCE=5Vdc) DC Current Gain (IC=5Adc, VCE=5Vdc) DC Current Gain (IC=8Adc, VCE=5Vdc) DC Current Gain (IC=12Adc, VCE=5Vdc) Collector-Emitter Saturation Voltage (IC=5Adc, IB=1Adc) (IC=8Adc, IB=1.6Adc) (IC=12Adc, IB=3Adc) (IC=8Adc, IB=1.6Adc, TC=100C) Base-Emitter Saturation Voltage (IC=5Adc, IB=1Adc) (IC=8Adc, IB=1.6Adc) (IC=8Adc, IB=1.6Adc, TC=100C) * Dynamic Characteristics Current Gain Bandwidth Product (IC=500mAdc, VCE=10Vdc, f=1MHz) Output Capacitance (VCB=10Vdc, IE=0, f=0.1MHz) * Switching Characteristics Delay Time Rise Time Storage Time Fall Time * Inductive Load, Clamped Voltage Storage Time Crossover Time (IC=8Adc, Vclamp=300Vdc) (IB1=1.6Adc,VBE(off)=5Vdc, TC=100C) tsv tc (VCC=125Vdc, IC=8A) IB1=IB2=1.6A, tp=25uS Duty Cycle1% td tr ts tf fT Cob 4 *hFE1 *hFE2 *hFE3 *hFE4 *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *VCE(sat)4 *VBE(sat)1 *VBE(sat)2 *VBE(sat)3 15 13 8 5 Is/b VCEO(sus) 400 Symbol Min. Spec. No. : HE200206 Issued Date : 2002.02.01 Revised Date : 2006.07.04 Page No. : 2/6 Typ. Max. Unit - - Vdc ICEV IEBO - - 1 5 1 mAdc mAdc See Figure 1 See Figure 2 - 22 1 1.5 3 2 1.3 1.6 1.5 Vdc Vdc 180 - MHz pF 0.06 0.45 1.3 0.2 0.1 1 3 0.7 uS uS uS uS 0.92 0.12 2.3 0.7 uS uS *Pulse Test: Pulse Width 380us, Duty Cycle2% HMJE13009A HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 100 VCE=5V 125 C o Spec. No. : HE200206 Issued Date : 2002.02.01 Revised Date : 2006.07.04 Page No. : 3/6 Saturation Voltage & Collector Current 10 VBE(sat) @ IC=5IB 75 C o 25 C o Saturation Voltage (V) hFE 10 1 25 C o 75 C o 125 C o 1 0.001 0.01 0.1 1 10 100 0.1 0.001 0.01 0.1 1 10 100 Collector Current (A) Collector Current (A) Saturation Voltage & Collector Current 10 VCE(sat) @ IC=4IB 10 Saturation Voltage & Collector Current VCE(sat) @ IC=5IB Saturation Voltage (V)... 1 125 C o Saturation Voltage (V) 1 75 C 125 C o o 75 C 0.1 25 C o o 0.1 25 C o 0.01 0.001 0.01 0.1 1 10 100 0.01 0.001 0.01 0.1 1 10 100 Collector Current (A) Collector Current (A) Capacitance & Reverse-Biased Voltage 1000 Switching Time & Collector Current 10 VC=125V, IC=5IB1 , IB1=-IB2 100 Switching Time (us)... Capacitance (pF) Tstg 1 Ton 10 Tf 1 0.1 1 10 100 0.1 0.1 1 10 100 Reverse-Biased Voltage (V) Collector Current (A) HMJE13009A HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE200206 Issued Date : 2002.02.01 Revised Date : 2006.07.04 Page No. : 4/6 Safe Ooperating Area 100 Collector Current-Ic (A).. . 10 100ms 1s 1 1ms 0.1 1 10 100 1000 Forward Voltage-VCB (V) HMJE13009A HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-220AB Dimension Marking: A D B E C F Pb Free Mark Pb-Free: " . " (Note) Normal: None H Spec. No. : HE200206 Issued Date : 2002.02.01 Revised Date : 2006.07.04 Page No. : 5/6 MJ E 13009A Control Code H I G Tab P L J M 3 2 1 O N K Date Code Note: Green label is used for pb-free packing Pin Style: 1.Base 2.Collector 3.Emitter Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM A B C D E F G H I J K L M N O P Min. 5.58 8.38 4.40 1.15 0.35 2.03 9.66 3.00 0.75 2.54 1.14 12.70 14.48 Max. 7.49 8.90 4.70 1.39 0.60 2.92 10.28 *16.25 *3.83 4.00 0.95 3.42 1.40 *2.54 14.27 15.87 *: Typical, Unit: mm 3-Lead TO-220AB Plastic Package HSMC Package Code: E Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HMJE13009A HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Soldering Methods for HSMC's Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP TP Ramp-up TL Tsmax Temperature tL Spec. No. : HE200206 Issued Date : 2002.02.01 Revised Date : 2006.07.04 Page No. : 6/6 Critical Zone TL to TP Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. Sn-Pb Eutectic Assembly <3 C/sec 100oC 150oC 60~120 sec <3oC/sec 183oC 60~150 sec 240 C +0/-5 C 10~30 sec <6oC/sec <6 minutes o o o Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 sec <3oC/sec 217oC 60~150 sec 260oC +0/-5oC 20~40 sec <6oC/sec <8 minutes Peak temperature 245 C 5 C o o o o Dipping time 10sec 1sec 10sec 1sec 260 C 5 C HMJE13009A HSMC Product Specification |
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